Bipolar npn uhf-Microwave Transisitor Bfg198

Bfg198t/r
Bipolar npn uhf-Microwave Transisitor
Philips Semiconductors / nxp Semiconductors
npn transistors,pnp transistors,transistors
v(br)ceo (v)=10
v(br)cbo (v)=20
i(c) Abs.(a) Collector Current=100m
Absolute Max. Power Diss. (w)=1.0
i(cbo) Max. (a)=100n
@v(cbo) (v) (Test Condition)=5.0
h(fe) Min. Static Current Gain=40
h(fe) Max. Current gain.=100
@i(c) (a) (Test Condition)=50m
@v(ce) (v) (Test Condition)=5.0
f(t) Min. (Hz) Transition Freq=8.0g
@i(c) (a) (Test Condition)=50m
@v(ce) (v) (Test Condition)=8.0
Power Gain Min. (dB)=15
@i(c) (a) (Test Condition)=50m
@v(ce) (v) (Test Condition)=8.0
@Freq. (Hz) (Test Condition)=800m
Semiconductor Material=Silicon
c(obo) (Max) (f)=1.5p
@Freq. (Hz) (Test Condition)=1.0m
Package=sot-223
Military=n